42Gb/mm²: Micron's next G11 NAND doubles density in 2027
Micron says G11 will pass 400 layers and double storage density over the current generation, with volume production in the second half of 2027.
Micron is working on a new storage chip that holds twice as much as today's and uses less power. It won't reach devices for about a year.
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Why it matters
Higher density and lower power mean bigger, more efficient SSDs, but production will not start before the second half of 2027.
Watch: memory keeps improving through layers and cell size together.
The details
- G11 NAND enters volume production in the second half of 2027, Micron said at an event this week.
- Micron expects roughly double the density of G9: from 21 to about 42 Gb/mm², according to Tom's Hardware's estimate.
- It expects up to 50% faster I/O, about 5,400 MT/s versus 3,600 MT/s, and over 25% less data-transfer energy per bit.
- G11 uses wafer-on-wafer bonding: one wafer for the memory array and another for the peripheral circuits.
- Micron has not disclosed the exact layer count and plans to share more technical details in 2027.
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